STTH3006CW november 1999 - ed: 3a turbo 2 ultra-fast high voltage rectifier ? combines highest recovery and voltage performance. ultra-fast, soft and noise-free recovery for low side effects. low inductance, allows simplified layout. features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 600 v i f(rms) rms forward current 30 a i f(av) average forward current tc = 92c d = 0.5 per diode per device 15 30 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 85 a t stg storage temperature range -65 +175 c tj maximum operating junction temperature + 175 c absolute ratings (limiting values) i f(av) 2x15 a v rrm 600 v tj (max) 175 c v f (max) 1.9 v trr (max) 50 ns major products characteristics k a1 a2 to-247 preliminary datasheet 1/5
symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r = 600 v tj = 25 c 100 m a tj = 125 c 10 400 v f ** forward voltage drop i f = 15 a tj = 25 c 2.4 v per leg tj = 125 c 1.5 1.9 i f = 30 a tj = 25 c 2.4 v total tj = 125 c1.51.9 pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2% to evaluate the maximum conduction losses use the following equation : p = 1.3 x i f(av) + 0.04 i f(rms) 2 static electrical characteristics symbol parameter value unit r th (j-c) junction to case thermal resistance per diode total 2.2 1.35 c/w thermal resistances symbol tests conditions min. typ. max. unit trr i f = 0.5 a irr = 0.25 a i r = 1 a tj = 25 c35ns i f = 1 a di f /dt = - 50 a/ m s v r = 30 v 50 i rm v r = 400 v i f = 15 a di f /dt = -200 a/ m s tj = 125c 9.5 a s factor 1- tfr i f = 15 a di f /dt = 120 a/ m s v fr = 1.1 x v f max tj = 25c 200 ns v fp 6v qrr v r = 400v i f = 15 a di f /dt = -200 a/ m s tj = 125c 380 nc dynamic electrical characteristics STTH3006CW 2/5
024681012141618 0 5 10 15 20 25 30 35 40 if(av) (a) pf(av)(w) d = 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 t d =tp/t tp fig. 1: conduction losses versus average current (per diode). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1 10 100 200 vfm(v) ifm(a) tj=125c maximum values tj=125c typical values tj=25c maximum values fig. 2: forward voltage drop versus current (per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp single pulse d = 0.1 d = 0.2 d = 0.5 fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 18 20 dif/dt(a/s) irm(a) vr=400v tj=125c if=2 x if(av) if=if(av) if=0.5 x if(av) fig. 4: peak reverse recovery current versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180 200 220 dif/dt(a/s) trr(ns) vr=400v tj=125c if=2 x if(av) if=if(av) if=0.5 x if(av) fig. 5: reverse recovery time versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 600 700 800 900 dif/dt(a/s) qrr(nc) vr=400v tj=125c if=2 x if(av) if=if(av) if=0.5 x if(av) fig. 6: reverse charges versus di f /dt (90% confidence, per diode). STTH3006CW 3/5
0 50 100 150 200 250 300 350 400 450 500 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dif/dt(a/s) s factor if< 2 x if(av) vr=400v tj=125c fig. 7: softness factor (tb/ta) versus di f /dt (typical values, per diode). 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tj(c) irm s factor qrr fig. 8: relative variation of dynamic parameters versus junction temperature (reference: tj=125c). 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 11 12 dif/dt(a/s) vfp(v) if=if(av) tj=125c fig. 9: transient peak forward voltage versus di f /dt (90% confidence, per diode). 0 50 100 150 200 250 300 0 50 100 150 200 250 300 dif/dt(a/s) tfr(ns) vfr=1.1 x vf max. if=if(av) tj=125c fig. 10: forward recovery time versus di f /dt (90% confidence, per diode). STTH3006CW 4/5
package mechanical data to247 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering code marking package weight base qty delivery mode STTH3006CW STTH3006CW to-247 4.36 g. 30 tube cooling method: c epoxy meets ul94,v0 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) STTH3006CW 5/5
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